UV/ミリ波PCD法における最大感度条件とSiエピタキシャルウェーハおよび極表面層評価

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  • Condition for Maximum Sensitivity in UV/Millimeter-Wave PCD Technique and Characterization of Epitaxial Layer and Subsurface Damage in Si Wafers Using Its Technique
  • UV ミリハ PCDホウ ニ オケル サイダイ カンド ジョウケン ト Si エピタキシャルウェーハ オヨビ ゴク ヒョウメンソウ ヒョウカ

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The technique for high measurement sensitivity in UV/Millimeter-wave PCD technique with 100 GHz millimeter wave has been discussed theoretically and experimentally. The maximum sensitivity was obtained near the matching between a radiated 100Ghz wave and Si wafer samples. The technique detected epilayer contamination as 1011 cm -3 order of Mo and Fe induced in the epitaxial crystal growth process. The technique also detected very slight subsurface damage induced by mirror polishing in commercial level wafers. The PCA signal with the technique well reflected removal of the damage by SCI cleaning. The behavior of PCA measured well agreed with the recovery of gate oxide integrity in MOS devices. The damage depth was determined to be 21 nm. PCA in UV/Millimeter-wave technique well revealed the subsurface damage induced by the final mirror polishing

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