Depth profiling of deep-level traps in GaN introduced by high-temperature thermal treatment with SiN cap layer
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- Furuta Satomu
- Nagoya Univ.
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- Horita Masahiro
- Nagoya Univ. IMaSS, Nagoya Univ.
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- Tanaka Nariaki
- Toyoda Gosei
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- Oka Tohru
- Toyoda Gosei
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- Suda Jun
- Nagoya Univ. IMaSS, Nagoya Univ.
Bibliographic Information
- Other Title
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- SiNキャップ層高温熱処理によりGaN表面付近に導入される電子トラップの深さ方向分布の熱処理時間依存性
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.1 (0), 2826-2826, 2020-02-28
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390010765198691200
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
