Removal of damaged layer from n-GaN surface using photoelectrochemical reactions
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- Matsumoto Satoru
- RCIQE Hokkaido Univ.
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- Edamoto Masaaki
- RCIQE Hokkaido Univ.
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- Kumazaki Yusuke
- RCIQE Hokkaido Univ.
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- Sato Taketomo
- RCIQE Hokkaido Univ.
Bibliographic Information
- Other Title
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- 光電気化学反応を利用したn-GaN表面ダメージ層の除去
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.1 (0), 3094-3094, 2017-03-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390012711638157184
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC