書誌事項
- タイトル別名
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- Evaluation of Fatigue Crack Propagation Rate at the Interface between Si Die and Underfill in Real Semiconductor Package Structures
抄録
<p>In this study, fatigue crack growth rate at Si/UF interface was evaluated by four-point bending fatigue crack growth tests. At the bottom of the Si die, the fatigue crack growth behavior was similar to that of the UF bulk, in which the transition from the threshold to steady-state crack growth was observed. The power exponent of the Paris law in the steady-state region was similar to that of the UF bulk, and the fatigue crack growth rate was different between the side and bottom of the Si die. These results suggest that the fatigue crack growth behavior at the interface strongly depends on the surface roughness of the Si die and the manufacturing process of underfilling.</p>
収録刊行物
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- 年次大会
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年次大会 2022 (0), J011-08-, 2022
一般社団法人 日本機械学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390014093884292480
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- ISSN
- 24242667
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可