Evaluation of Fatigue Crack Propagation Rate at the Interface between Si Die and Underfill in Real Semiconductor Package Structures
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- SHINADA Takumi
- Graduate School of Shibaura Institute of Technology
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- KARIYA Yoshiharu
- Department of Materials Science and Engineering, Shibaura Institute of Technology
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- HARA Hidetoshi
- Graduate School of Shibaura Institute of Technology
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- ENOMOTO Toshiaki
- NAMICS Corporation
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- YAMAGUCHI Hiroshi
- NAMICS Corporation
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- YOSHIDA Takuya
- NAMICS Corporation
Bibliographic Information
- Other Title
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- 半導体パッケージ構造におけるSiダイ/アンダーフィル界面の疲労き裂進展速度評価
Abstract
<p>In this study, fatigue crack growth rate at Si/UF interface was evaluated by four-point bending fatigue crack growth tests. At the bottom of the Si die, the fatigue crack growth behavior was similar to that of the UF bulk, in which the transition from the threshold to steady-state crack growth was observed. The power exponent of the Paris law in the steady-state region was similar to that of the UF bulk, and the fatigue crack growth rate was different between the side and bottom of the Si die. These results suggest that the fatigue crack growth behavior at the interface strongly depends on the surface roughness of the Si die and the manufacturing process of underfilling.</p>
Journal
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- The Proceedings of Mechanical Engineering Congress, Japan
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The Proceedings of Mechanical Engineering Congress, Japan 2022 (0), J011-08-, 2022
The Japan Society of Mechanical Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390014093884292480
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- ISSN
- 24242667
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed