Linear Relationship between Reactive Gas Flow Rate and Target Power at Mode Transitions in Reactive Sputtering

DOI Web Site 参考文献33件
  • Nakano Takeo
    Department of Science and Technology, Seikei University
  • Kimura Kosuke
    Department of Science and Technology, Seikei University
  • Iijima Yuto
    Department of Science and Technology, Seikei University
  • Takeuchi Masato
    Department of Science and Technology, Seikei University
  • Oya Kei
    Department of Science and Technology, Seikei University
  • Nagao Masayoshi
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Ohsaki Hisashi
    National Institute of Advanced Industrial Science and Technology (AIST)

抄録

<p>Mode transitions in reactive sputtering of metal (Ti, V) oxides are studied. Under a controlled Ar gas pressure at a flow rate of 10 sccm, direct current sputtering plasma was generated. The oxygen flow rate Q and discharge power P were changed in two ways (Q was varied at fixed P, and vice versa), and the mode transitions were monitored using the state jump in the discharge voltage. When the transition points (P, Q) were plotted as two-dimensional (2D) maps, the metal-to-oxide and oxide-to-metal transition points were found to be located on two corresponding straight lines that passed through the origin, irrespective of how the parameters were varied. The origin of this behavior is discussed and ascribed to the linear relationship between the input power and the sputter etching rate of the target. These results also suggest that the metal-mode, hysteresis, and oxide-mode regions of the 2D map can be determined by a few pilot experiments. By depositing vanadium oxide films under conditions in the oxide-mode region, near its boundary, films with very similar optical properties could be obtained.</p>

収録刊行物

参考文献 (33)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ