Preparations of ITO Thin Films by Low Temperature and Low Damage Process

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Other Title
  • 低温・低ダメージプロセスによるインジウムースズ酸化物（ＩＴＯ）薄膜の作製
  • テイオン テイダメージプロセス ニ ヨル インジウム スズ サンカブツ ITO ハクマク ノ サクセイ

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Description

We deposited indium-tin oxide (ITO) thin films as transparent conductive electrode on no heating substrate by the facing targets sputtering system. The substrate temperature during the deposition was lower than 40°C. The ITO film showed resistivity of 5.2 × 10-4 Ω·cm and light transmittance over 90% at 550 nm, which was obtained by changing deposition pressure and O2 gas flow rate during the deposition. Surface morphology and the crystal structure were analyzed by AFM and XRD, respectively. Surface average roughness Ra and surface maximum roughness Rmax were 0.46 nm and 7.4 nm, respectively. The XRD analysis revealed entirely amorphous structure. <BR>We also obtained the ITO films with resistivity of 4.1 × 10-4 Ω·cm by stable low voltage sputtering with DC + RF discharge.

Journal

  • Shinku

    Shinku 47 (3), 187-190, 2004

    The Vacuum Society of Japan

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