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Studies of the Distribution of the Self-Bias Potential on an RF Electrode in Plasma.
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- BANNO Tatsuya
- Department of Applied Physics, University of Tokyo
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- TSUZUKI Kazuhiro
- Department of Applied Physics, University of Tokyo
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- KINBARA Akira
- Department of Applied Physics, University of Tokyo
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- NAKAGAWA Yukito
- ANELVA Corporation
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- TSUKADA Tsutomu
- ANELVA Corporation
Bibliographic Information
- Other Title
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- 高周波放電電極上の自己バイアス電位分布の研究
- コウシュウハ ホウデン デンキヨクジョウ ノ ジコ バイアス デンイ ブンプ
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Description
Self-bias potential and its distribution of a radio-frequency (RF) electrode have been measured in argon and helium plasma using probes penetrating the electrode. In the absence of the magnetic field the self-bias potential distribution is almost homogeneous at-150 V (RF power = 26 W) in Ar plasma. When the magnetic field (B =0.04 T) parallel to the electrode is applied, the mean value of the potential is reduced to-40 V and the gradient in the potential distribution occurs along the E× B direction. Rotation of the magnetic field at a frequency below 50 Hz is unable to reduce potential inhomogeneity, but this technique enables us to measure the potential distribution as a continuous function of the azimuthal angle. In helium plasma, another type of inhomogeneity parallel to the magnetic field occurs; this inhomogeneity can be reduced effectively by pulsed Ar gas injection. These data are discussed to show physical meaning and industrial applications.
Journal
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- Shinku
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Shinku 37 (8), 621-628, 1994
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679039995392
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- NII Article ID
- 10007964268
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 3888944
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed