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Ultra High Frequency Plasma Source Using Multi-Window Type Antenna.
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- NAKAGAWA Yukito
- ANELVA CORPORATION
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- WANI Etsuo
- ANELVA CORPORATION
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- SATO Hisaaki
- ANELVA CORPORATION
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- SAMUKAWA Seiji
- Silicon Systems Research Lab.
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- TSUKADA Tsutomu
- ANELVA CORPORATION
Bibliographic Information
- Other Title
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- マルチウィンドウ型アンテナを用いた極超短波プラズマ源
- マルチウィンドウガタ アンテナ オ モチイタ ゴクチョウタンパ プラズマゲン
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Description
A new plasma source using a ultra high frequency (UHF) power radiated by a multi-window type antenna was developed. The UHF power was confined in a re-entrant type cavity resonator and radiated from 6 (six) quartz windows which were located on the bottom plate of the cavity. The production efficiency of UHF plasma was improved employing the new antenna structure. The radial non-uniformity of the ion current was less than ±5% at the plasma density of 1011 cm-3. The value is applicable for the φ300 mm wafer processing. Some preliminary results on SiO2 etch characteristics employing the perfluorocarbon gas chemistry shows that the plasma source will be suitable for the future fine etch processes.
Journal
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- Shinku
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Shinku 41 (3), 307-310, 1998
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679040184320
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- NII Article ID
- 10001960037
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 4469639
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed