CW Electron Beam Annealing with a Modified SEM

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Other Title
  • 改造ＳＥＭによるＣＷ電子線アニール　　絶縁膜上多結晶シリコン膜の大粒径化とひ素イオン注入シリコン層
  • カイゾウ SEM ニヨル CW デンシセン アニール ゼツエン マク ジョウ
  • 絶縁膜上多結晶シリコン膜の大粒径化とひ素イオン注入シリコン層

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Description

A scanning electron microscope has been modified for an electron beam annealing system by removing the spray apertures and the objective lens, and by adding the high power supply, the sawtooth deflecting signal scanning generators, and the static blanking plate. Recrystallization of fine-grained polycrystalline silicon films on insulating layers has been studied with the annealing system. Large-grained polycrystalline silicon films are obtained after electron beam annealing. A typical size of them is 10 μm in width and several mm in length. Annealing of arsenic ion implanted silicon layer is also investigated. High density extrinsic type dislocation loops are observed, whose density and size depend on implantation dose and annealing repetition.

Journal

  • Shinku

    Shinku 25 (6), 428-438, 1982

    The Vacuum Society of Japan

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