書誌事項
- タイトル別名
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- High Efficiency a-SiC: H/a-Si: H Heterojunction Solar Cells
- コウ コウリツ a SiC H a Si Hヘテロ セツゴウ タイヨウ デンチ
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抄録
Properties and fabrication technical data on glow discharge produced hydrogenated amorphous silicon carbide have been described. A series of experimantal studies of the tffects of impurity doping on the amorphous silicon carbide has also been carried out. It has been shown from the experiment that a hydrogenated amorphous silicon carbide prepared by the plasma decomposition of [SiH4(i-x) +CH4(x)] gas mixture has a good valency electron controllability. Employing the property of the valency controlled a-SiC: H as a wide gap window junction, a-SiC: H/a-Si: H heterojunction solar cells have been fabricated. As a result, we have succeeded to break through an 8% efficiency barrier with this new material. A typical performance of a-SiC: H/a-Si: H heterojunction cell is Jsc of 15.21 mA/cm2, Voc of 0.88 volts, FF of 60.1% and η of 8.04%.
収録刊行物
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- 真空
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真空 25 (6), 448-456, 1982
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679040298112
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- NII論文ID
- 130000865879
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- NII書誌ID
- AN00119871
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- COI
- 1:CAS:528:DyaL38XkslGmu7s%3D
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 2453576
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可