Synthesis of Carbon Nitride Films by Electron Cyclotron Resonance Sputtering Deposition Method.

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  • 電子サイクロトロン共鳴スパッタリング法による窒化炭素薄膜の合成
  • デンシ サイクロトロン キョウメイ スパッタリングホウ ニ ヨル チッカ タン

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Carbon nitride films were prepared by electron cyclotron resonance (ECR) sputtering deposition method using a carbon target and a nitrogen atmosphere. The deposited films were evaluated with the x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy (AFM) and x-ray diffraction. The nitrogen concentration, chemical bonding, surface morphology and structure were clearly dependent on the floating substrate potential, corresponding to the ion irradiation energy onto substrates. The maximum of nitrogen to carbon atomic ratio (N/C) for the film deposited at a floating substrate potential of - 50 V reached to 1.35, which was stoichiometry of C3N4. The XPS N 1 s and Raman spectra indicated that the change of bonding structure occurred with increasing nitrogen concentration in the deposited film. Furthermore micro-crystals were observed with AFM. The x-ray diffraction measurement of the film deposited at 600°C suggests that the lattice parameters of the micro-crystal are similar to the predicted beta and/or alpha C3N4.

Journal

  • Shinku

    Shinku 41 (5), 512-515, 1998

    The Vacuum Society of Japan

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