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- TAKAHAMA Kunihiko
- Research Center, SANYO Electric Co., Ltd.
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- AOE Hiroyuki
- Research Center, SANYO Electric Co., Ltd.
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- HANAFUSA Hiroshi
- Research Center, SANYO Electric Co., Ltd.
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- KAWAHARA Keita
- Research Center, SANYO Electric Co., Ltd.
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- MORIMOTO Yoshihiro
- Research Center, SANYO Electric Co., Ltd.
Bibliographic Information
- Other Title
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- 三次元回路素子における低温エピタキシー
- サンジゲン カイロ ソシ ニ オケル テイオン エピタキシー
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Abstract
To fabricate three dimensional ICs, an epitaxy technology that is usable under 900°C is required. For this purpose, new fabrication technologies for single crystal silicon, insulating layers, and electrode films have been investigated. As a result, desirable single crystal films in the structure of Si/Si, Si/sapphire and MoSi2/Si were obtained by means of ionization vapor deposition (IVD) at 750°C at the deposition rate as high as 0.5 μm/min. The impurity concentration of the film is controllable, and the mobility has been reached nearly to the bulk Si level. On the other hand, single crystal films in the structure of MgO·Al2O3/Si were obtained at the deposition temperature of 900°C by means of CVD epitaxy. Using these two epitaxy methods (IVD and CVD), single crystal films in the structure of Si/MgO ·Al2O3/Si have been fabricated successfully.
Journal
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- Shinku
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Shinku 27 (6), 517-521, 1984
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679041054592
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- NII Article ID
- 130000865351
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 2994773
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed