Deposition of BaTiO3 Thin Films by ArF Excimer Laser Ablation.
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- INOUE Narumi
- Department of Electronic Engineering, The National Defense Academy
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- TOYAMA Ichiro
- Department of Electrical Engineering, The National Defense Academy
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- KASHIWABARA Shigeru
- Department of Electrical Engineering, The National Defense Academy
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- TOSHIMA Shigetada
- Department of Electrical Engineering, The National Defense Academy
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- FUJIMOTO Ryozo
- Department of Electrical Engineering, The National Defense Academy
Bibliographic Information
- Other Title
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- Deposition of BaTiO3 Thin Films by ArF
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Abstract
BaTiO3 films have been deposited on a quartz substrate at various substrate temperatures by the ArF excimer laser ablation technique. Crystallization of the film deposited at substrate temperatures as low as 300°C was confirmed by X-ray diffraction analysis. The expansion velocities of the laser plume and the ablated species in the plume have also been investigated by time-resolved optical observation and spectroscopy.
Journal
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- Shinku
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Shinku 36 (4), 410-413, 1993
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679041133312
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- NII Article ID
- 10007959900
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 3824345
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed