書誌事項
- タイトル別名
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- Vacuum Electron Sources. Fabrication of Integrated Field Emitters.
- シュウセキガタ デンカイ ホウシュツ デンシゲン ノ セイサク
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説明
We have fabricated three types of silicon (Si) field emitters that consist of a Si conical tip and niobium gate electrodes, as follows. (1) An np-type emitter, in which an np junction is built by using ion implantation, exhibits photosensitive field emission. (2) A MOSFET-structured field emitter consists of an emitter tip and a built-in MOSFET. This device exhibits remarkable stability and controllability of emission current. (3) A double-gated field emitter has a vertical triode structure consisting of a conical Si tip and two gates surrounding the tip. The upper gate operates as a focusing lens to generate focused electron beams.
収録刊行物
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- 真空
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真空 41 (4), 434-439, 1998
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041308416
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- NII論文ID
- 10001958128
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 4501799
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可