書誌事項
- タイトル別名
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- Quantitative Analysis of the Composition for a-Si<SUB><I>x</I></SUB>Ci<SUB>1-<I>x</I></SUB> : H Alloys by XPS
- XPS ニヨル a SixC1 X H ゴウキン ノ ソセイ ブンセキ
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説明
Amorphous Si-C with H (aSixC1-x : H) alloy system formed in the gas mixture of Ar + 20% H2 by r.f. sputtering method has been studied quantitatively by X-ray photoelectron spectroscopy (XPS). The composition x has been obtained as a function of the fractional area (A) of Si on the sputtering target by using epitaxial grown SiC films as a standard. As a result, the composition x can be approximately evaluated by the equation; x = A/ {A + (1-A) ·ξ}, (ξ = 0.54), where ξ is the sputtering ratio of graphite to Si.
収録刊行物
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- 真空
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真空 23 (6), 303-309, 1980
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041965056
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- NII論文ID
- 130000866749
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 2183218
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可