The Effect of Stress due to Impurity on Point Defect Generation in Silicon Crystal.

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  • KIKUCHI Michimasa
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • INOUE Naohisa
    Research Institute for Advanced Science and Technology, Osaka Prefecture University
  • TANAHASI Katsuto
    Research Institute for Advanced Science and Technology, Osaka Prefecture University

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Other Title
  • シリコン結晶中の点欠陥形成に対する不純物原子の応力効果
  • シリコン ケッショウ チュウ ノ テン ケッカン ケイセイ ニ タイスル フジュンブツ ゲンシ ノ オウリョク コウカ

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Abstract

Equilibrium concentration change of point defects in Si crystal due to the stress by doping impurities is estimated. The relationship between equilibrium concentration of point defects and secondary defect generation are discussed. It is considered that the changing point defect concentration only about 0.1% affects the secondary defect generation.

Journal

  • Shinku

    Shinku 42 (3), 349-352, 1999

    The Vacuum Society of Japan

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