Plasma Technology for Poly-crystaline Silicon Thin Film Transister Manufacturing. Polycrystalline Silicon Film Growth by Ultrahigh-vacuum Sputtering System.

DOI Web Site 7 References

Bibliographic Information

Other Title
  • 多結晶Ｓｉ薄膜トランジスタ製作へのプラズマ技術の応用　　超高真空スパッタリング装置を用いた多結晶Ｓｉ膜の形成
  • チョウコウシンクウ スパッタリング ソウチ オ モチイタ タケッショウ Si マク ノ ケイセイ

Search this article

Description

Using in ultrahigh-vacuum (UHV) system, we could form polycrystalline silicon films. Polycrystalline silicon (poly-Si) films are formed on glass at substrate temperature below 550°C. We used two methods of crystallization. One is asdeposited polycrystalline Si by an UHV sputtering method and the other is solid-phase crystallization (SPC) of silicon film in UHV conditions. As-deposited poly-Si is oriented to (220) and SPC poly-Si is oriented to (111). The crystallinity is improved by increasing film thickness in as-deposited poly-Si film. Ar atoms, which are used for sputtering, disturb the crystallization. Ar concentration in SPC poly-Si is influenced by annealing pressure and surface conditions of Si film. Oxide layer on Si film disturbs SPC. The field effect mobility, 18 cm2/Vs, was obtained by a SPC poly-Si TFT.

Journal

  • Shinku

    Shinku 44 (6), 578-582, 2001

    The Vacuum Society of Japan

References(7)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top