書誌事項
- タイトル別名
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- On the Nucleation Mechanism of the Void Defects in Czochralski Silicon.
- Czochralski シリコン ケッショウ チュウ ノ クウドウカク ケイセイ キコウ ノ コウサツ
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抄録
There are void defects in as-grown Czochralski Silicon. Void defects provoke breakdown of thermal oxide in the MOS structure. Therefore it is necessary to study their nucleation mechanism. We had proposed the heterogeneous nucleation model. Recently, homogeneous nucleation model has been proposed by Voronkov. In this paper we examine the problems of homogeneous model quantitatively. We propose that oxide precipitate is the heterogeneous nucleation site.<BR>Carbon is likely to be a candidate for the heterogeneous nucleation site of the oxide precipitate.
収録刊行物
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- 真空
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真空 45 (1), 32-35, 2002
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679042144256
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- NII論文ID
- 10007762717
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 6067646
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可