On the Nucleation Mechanism of the Void Defects in Czochralski Silicon.

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  • Ｃｚｏｃｈｒａｌｓｋｉシリコン結晶中の空洞核形成機構の考察
  • Czochralski シリコン ケッショウ チュウ ノ クウドウカク ケイセイ キコウ ノ コウサツ

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Abstract

There are void defects in as-grown Czochralski Silicon. Void defects provoke breakdown of thermal oxide in the MOS structure. Therefore it is necessary to study their nucleation mechanism. We had proposed the heterogeneous nucleation model. Recently, homogeneous nucleation model has been proposed by Voronkov. In this paper we examine the problems of homogeneous model quantitatively. We propose that oxide precipitate is the heterogeneous nucleation site.<BR>Carbon is likely to be a candidate for the heterogeneous nucleation site of the oxide precipitate.

Journal

  • Shinku

    Shinku 45 (1), 32-35, 2002

    The Vacuum Society of Japan

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