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- NAKADA Tokio
- Department of Electrical Engineering and Electronics, Aoyama Gakuin University
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- KUNIOKA Akio
- Department of Electrical Engineering and Electronics, Aoyama Gakuin University
Bibliographic Information
- Other Title
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- 高周波スパッタリングによるα‐HgS薄膜の作製とその結晶構造
- コウシュウハ スパッタリング ニ ヨル アルファ-HgS ハクマク ノ サクセイ ト ソノ ケッショウ コウゾウ
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Description
Films of α-HgS up to 3.5μm thick have been grown on glass substrates by rf-sputtering techniques. Dependence of film structure on substrate temperature, rf-power density and film thickness have been studied by reflection electron diffraction. At substrate temperatures below 80°C with rf-power densities ranging from 0.2 to 1.2 W/cm2, the deposited films were polycrystalline with a <1120> fiber texture of α-HgS and were yellow-orange color, highly transparent, good adherence and stable up to 280°C in atmosphere. At the substrate temperatures above 80°C, the deposited films were polycrystalline with < 111> and < 110 > fiber texture of β-HgS at lower and higher power densities, respectively. X-ray powder patterns revealed that the lattice constants of rf-sputtered α-HgS films were similar to those of ASTM data and had little influence on rf-power density and annealing.
Journal
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- Shinku
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Shinku 17 (10), 356-363, 1974
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679044040832
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- NII Article ID
- 130000862008
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 7560393
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed