書誌事項
- タイトル別名
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- Nitridation Mechanisms on Si(100) through Strong N Condensation
- チッソ ノ キョウギョウシュウ ニ ヨル Si 100 チッカマク ケイセイ キコウ
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抄録
We studied N condensation behaviors in crystalline Si. N atoms introduced rapidly on Si(100) generate SiN agglomerated structures. We found that this agglomeration is induced by charge transfer between Si and N atoms, which is much stronger than those of silicon oxidation. N atoms introduced slowly on Si(100), however, stay at around the third layer from the topmost surface, leading likely to a stable Si-N network layer at around the same layer. This layer can be a seed layer for layer-by-layer Si3N4 growth on Si(100) along the vertical direction to the surface. Agglomeration and uniform growth of Si3N4 growth have been clearly observed by experimental techniques.<br>
収録刊行物
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- 真空
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真空 50 (11), 652-658, 2007
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679044187648
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- NII論文ID
- 10020009808
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 9303622
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可