反応性二成分スパッタリングによる（Ｔｉ，Ａｌ）Ｎ膜の作製

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タイトル別名
  • Preparation of (Ti,Al)N films by reactive binary sputtering.
  • ハンノウセイ 2セイブン スパッタリング ニ ヨル Ti Al N マク ノ

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抄録

(Ti, Al)N films having various composition ratios of Ti and Al were deposited onto a hard alloy substrate by reactive RF sputtering using a single power source, the power from which was split by a variable coupling capacitor. A series of (Ti, Al)N specimens was obtained by changing voltage in a mixed argon-nitrogen atmosphere.<br>Film composition were measured by X-ray diffraction and EPMA.<br>The results showed that all the (Ti, Al)N films showed homogenous distribution of Ti and Al. X-ray patterns showed obvious formation of TiN for concentrated Ti side and AlN formation for Al riched side.<br>Those (Ti, Al)N films having Ti-to-Al ratios approximating 1 1 were amorphous. Hardness of the films was from Hv1200 to Hv1300.

収録刊行物

  • 表面技術

    表面技術 41 (5), 530-533, 1990

    一般社団法人 表面技術協会

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