書誌事項
- タイトル別名
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- AC Etching Characteristics of Aluminum in Hydrochloric/sulfuric Acid Solution.
- エンサン リュウサン コンゴウ ヨウエキチュウ ニ オケル アルミニウム ノ
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説明
The large specific surface area on a low voltage-use aluminum electrolytic capacitor electrode was produced by alternating-current etching in a chlorine solution. The effect of sulfuric acid added to the 3.6% hydrochloric acid solution etchant on etch morphology was examined by Auger spectroscopy, electron microscopy, and galvanovoltammetry. Electrostatic capacitance, pit size, and amount of aluminum hydroxide formed during etching at 1∼50Hz in 3.6%HCl/n%H2SO4(n=0∼1) solution at 333K were determined. A deeper etched porous layer was produced in a 3.6%HCl/0.25%H2SO4 solution than in a 3.6%HCl solution, with general dissolution prevented and surface film formation facilitated by the additive. The atomic ratio O/Al as calculated from the O (507eV) and Al-O (55eV) peaks of the surface film developed in a 3.6%HCl/0.25%H2SO4 solution is 1.8∼2.0 higher than 1.5 for the etched film in a 3.6%HCl solution.
収録刊行物
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- 表面技術
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表面技術 49 (6), 643-648, 1998
一般社団法人 表面技術協会
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詳細情報 詳細情報について
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- CRID
- 1390282679091263616
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- NII論文ID
- 10002109654
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- NII書誌ID
- AN1005202X
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- COI
- 1:CAS:528:DyaK1cXjvV2gtLY%3D
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- ISSN
- 18843409
- 09151869
- http://id.crossref.org/issn/09151869
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- NDL書誌ID
- 4502334
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可