低出力Ａｒイオン照射前処理によるＴｉ薄膜／Ｓｉ基板間の密着性の改善

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タイトル別名
  • Adhesion Enhancement between Ti Films and Si Substrates by Low Power Ar Ion Bombardment.
  • テイ シュツリョク Ar イオン ショウシャ マエショリ ニヨル Ti ハクマ

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抄録

The influence of Ar ion bombardment of Si (100) substrates on adhesion between Ti thin films and Si substrates was investigated. To evaluate adhesion, the internal stress in overcoated films was used. TEM, AES, and RBS observation were used to observe the interface between Ti and Si. In the low power density of Ar ions, adhesion was not high enough because of insufficient substrates cleaning. When power density was too high, adhesion was not high enough, either. This is due to the incorporation of Ar atoms at the interface during Ar ion bombardment. To enhance adhesion, it is important to optimize the power density of Ar ion bombardment.

収録刊行物

  • 表面技術

    表面技術 47 (10), 858-862, 1996

    一般社団法人 表面技術協会

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