In situ Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si(111) Surface: Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Structure.

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  • Tochihara Hiroshi
    Department of Applied Physics, Kyushu University, Ropponmatsu, Chuo–ku, Fukuoka 810–8560
  • Shimada Wataru
    National Institute of Polar Research, Kaga, Itabashi–ku, Tokyo 173–0003
  • Yamamoto Hiroshi
    Research Center for Advanced Science and Technology, University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–0041
  • Taniguchi Masahiro
    Faculty of Science, Hokkaido University, Sapporo 060–0811
  • Yamagishi Akihiko
    Faculty of Science, Hokkaido University, Sapporo 060–0811

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  • In situ Scanning Tunneling Microscopy O
  • <i><i>I</i><i>n</i></i><i><i>s</i><i>i</i><i>t</i><i>u</i></i>Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si(111) Surface: Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Structure

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The DAS 7× 7 surface structure is known to be the most stable on Si(111), and we investigated its formation mechanism by scanning tunneling microscopy. Triangular narrow unreconstructed-regions (“1× 1”), prepared on terraces by quenching, are chosen for in situ observation of the formation of the unit cell of the DAS 7× 7 at about 250°C. It is demonstrated that the single stacking-faulted half of the unit cell is formed or annihilated dynamically in a structural sequence of “1× 1”↔ 5× 5↔ 7× 7↔ 9× 9. The faulted half is stabilized when another neighboring faulted-half of the same size is formed during its lifetime. We propose a formation model for the 7× 7 unit cell.

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