Electrical Resistivity of Doped Mott Insulators V2-yO3.

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  • Nishimoto Satoshi
    Department of Physics, Faculty of Science and Technology, Science University of Tokyo, Noda 278
  • Moriya Toru
    Department of Physics, Faculty of Science and Technology, Science University of Tokyo, Noda 278

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  • Electrical Resistivity of Doped Mott In
  • Electrical Resistivity of Doped Mott Insulators<b><i>V</i><sub>2-<i>y</i></sub><i>O</i><sub>3</sub></b>

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The electrical resistivity of metallic V2-yO3 is calculated assuming that the antiferromagnetic spin fluctuations dominate the scattering mechanism for the conduction electrons. The spin fluctuations are described in terms of the self-consistent renormalization theory with parameter values estimated from the results of a neutron inelastic scattering experiment. The final result agrees reasonably well with the experimental results.

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