Net Charge of Electron-Hole Drops in Pure and Doped Ge
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- Ugumori Tadaki
- Technical College, Yamaguchi University
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- Morigaki Kazuo
- The Institute for Solid State Physics, University of Tokyo
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- Nagashima Chieko
- The Institute for Solid State Physics, University of Tokyo
書誌事項
- タイトル別名
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- Net Charge of Electron Hole Drops in Pu
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説明
A net charge of drops has been measured with a photocurrent method and a photoluminescence method at 1.5 K in pure and doped Ge. The sign of the net charge obtained from the two methods is in agreement with each other. The sign is negative in pure Ge (ND<1013 cm−3) and p-type Ge (NA=8×1014 cm−3). The sign is positive in n-type Ge (1013 cm−3\lesssimND≤2×1014 cm−3), and the sign cannot be obtained for ND≥8×1014 cm−3 and NA=5×1011 cm−3. The sign reversals are not observed under ⟨111⟩ uniaxial stress (\lesssim103 kg/cm2).
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 46 (2), 536-541, 1979
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679165763968
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- NII論文ID
- 110001964275
- 130003737692
- 210000087952
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1979JPSJ...46..536U
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- COI
- 1:CAS:528:DyaE1MXhsVClu7w%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2040824
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- 本文言語コード
- en
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- NDLサーチ
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- 使用不可
