Effect of Si/C Ratio on Thermoelectric Properties of β-FeSi2 Mechanically Alloyed with(Si+C)Additions

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  • Nagai Hiroshi
    Department of Materials Science and Processing, Graduate School of Osaka University
  • Katsura Takayuki
    Department of Materials Science and Processing, Graduate School of Osaka University
  • Ito Mikio
    Department of Materials Science and Processing, Graduate School of Osaka University
  • Katsuyama Shigeru
    Department of Materials Science and Processing, Graduate School of Osaka University
  • Majima Kazuhiko
    Department of Materials Science and Processing, Graduate School of Osaka University

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タイトル別名
  • Effect of Si/C Ratio on Thermoelectric Properties of β-FeSi<SUB>2</SUB> Mechanically Alloyed with (Si+C) Additions
  • Effect of Si C Ratio on Thermoelectric Properties of ベータ FeSi2 Mechanically Alloyed with Si C Additions
  • Effect of Si/C Ratio on Thermoelectric Properties of &beta;-FeSi<SUB>2</SUB> Mechanically Alloyed with (Si+C) Additions

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In order to improve the thermoelectric performance of β-phase, the thermoelectric properties of hot-pressed n-type Fe0.98Co0.02Si2 and p-type Fe0.92Mn0.08Si2 mechanically alloyed with 4 mass% of (Si+C) powders at various Si/C molar ratios (Si/C = 0.5∼2) have been investigated. Both the n-type and p-type mechanically alloyed and hot-pressed samples are composed of mostly the β-phase with a dispersion of a small amount of metallic ε-phase particles. The amount of the ε-phase decreases with increasing Si/C ratio in samples containing 4 mass%(Si+C). The ε-phase disappears at Si/C = 1.5 for the n-type and 1.75 for p-type FeSi2. Many fine α-SiC particles around 20 nm form in the samples mechanically alloyed for 20 h and hot-pressed at 1173 K for 1 h. The thermoelectric power increases with increasing Si/C ratio due to the increase in the amount of the semiconducting β-phase by the reaction of the metallic ε-phase with some part of Si, which was added to form SiC. The thermoelectric power exhibits a maximum at Si/C = 1.5 in n-type FeSi2 containing 4 mass%(Si+C) and Si/C = 1.75 for p-type. Although the electrical resistivity is increased by the addition of (Si+C), the Si/C ratio dependence of the electrical resistivity is not drastic for both n-type and p-type FeSi2. The addition of (Si+C) markedly decreases the thermal conductivity of both n-type and p-type FeSi2 due to the dispersion of fine α-SiC particles. The maximum figure of merit values appear at Si/C = 1.5 in n-type FeSi2 samples containing 4 mass%(Si+C) and Si/C = 1.75 for p-type.

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