Effect of Annealing Atmosphere on Void Formation in Copper Interconnects
-
- Konishi Shinya
- Department of Materials Science and Engineering, Kyoto University
-
- Moriyama Miki
- Department of Materials Science and Engineering, Kyoto University
-
- Murakami Masanori
- Department of Materials Science and Engineering, Kyoto University
この論文をさがす
説明
In order to understand the void formation mechanism in electroplated Cu interconnects used in Si-semiconductor devices, microstructure of Cu/CuO/Cu layered films which were prepared on the Si3N4/Si substrates by the sputter-deposition technique was observed by transmission electron microscopy (TEM) and scanning ion microscopy (SIM). A high density of macro and micro voids were observed in the samples annealed in atmosphere containing hydrogen, whereas no voids were observed in the samples annealed in Ar atmosphere. TEM observation suggested that a small amount of oxygen contained in the Cu films (even a native oxide layer) formed water vapor at elevated temperatures, causing formation of the micro-voids when the samples were annealed in hydrogen atmosphere. The present result suggested that the void formation in the electroplated Cu films was induced by existence of impurities such as oxygen in the Cu films, and that the void growth was strongly enhanced by annealing in hydrogen atmosphere.
収録刊行物
-
- MATERIALS TRANSACTIONS
-
MATERIALS TRANSACTIONS 43 (7), 1624-1628, 2002
公益社団法人 日本金属学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282679223561472
-
- NII論文ID
- 130004451873
- 10012325332
-
- NII書誌ID
- AA1151294X
-
- COI
- 1:CAS:528:DC%2BD38Xmt1equ78%3D
-
- ISSN
- 13475320
- 13459678
-
- HANDLE
- 2433/5132
-
- NDL書誌ID
- 6240715
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- OpenAIRE
-
- 抄録ライセンスフラグ
- 使用不可
