Ordering of In and Ga in Epitaxially Grown In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As Films on (001) InP Substrates

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  • Shin Keesam
    Institute for Interdisciplinary Research, Tohoku University Dept. of Metallurgy and Materials Science, Changwon National University
  • Yoo Junghoon
    Dept. of Metallurgy and Materials Science, Changwon National University
  • Joo Sungwook
    Dept. of Metallurgy and Materials Science, Changwon National University
  • Mori Takahiro
    Institute for Interdisciplinary Research, Tohoku University Institute for Materials Research, Tohoku University
  • Shindo Daisuke
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • Hanada Takashi
    Institute for Materials Research, Tohoku University
  • Makino Hisao
    Institute for Materials Research, Tohoku University
  • Cho Meoungwhan
    Institute for Materials Research, Tohoku University
  • Yao Takafumi
    Institute for Interdisciplinary Research, Tohoku University Institute for Materials Research, Tohoku University
  • Park Young-Gil
    Samsung SDI Co. Ltd.

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  • Ordering of In and Ga in Epitaxially Grown In0.53Ga0.47AS Films on (001) InP Substrates

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Ordering of In and Ga in In0.53Ga0.47As films grown at 573 K, 673 K, and 773 K by molecular beam epitaxy was investigated by electron diffraction pattern analysis using a transmission electron microscope equipped with an Ω-filter and imaging plates. In addition, high-resolution electron microscopy on the specimens and fast Fourier transformation analyses were performed to identify the short-range ordering. In the EDPs obtained from the specimen grown at 573 K, the diffuse scattering corresponding to short-range ordering was observed only when the film was investigated at [\\bar110] beam incidence, whereas for the specimens grown at 673 and 773 K, diffuse scattering was observed only at [110] beam incidence. The ordering of 573 K specimen has a triple period and those of 673 K and 773 K have a double period. Through the processing of the HREM images and comparison of calculated and observed diffuse-scattering distribution, models of short-range ordered structures were proposed on the basis of the triple-A type ordering at the specimen grown at the 573 K and the CuPt-B type ordering at the specimen grown at 773 K.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 47 (4), 1115-1120, 2006

    The Japan Institute of Metals and Materials

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