Implant Resist Approaches for 193nm Second Generation Radiation Sensitive Developable Bottom Anti Reflective Coatings
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- Houlihan Francis
- AZ Electronic Materials
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- Dioses Alberto
- AZ Electronic Materials
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- Toukhy Medhat
- AZ Electronic Materials
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- Romano Andrew
- AZ Electronic Materials
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- Oberlander Joseph
- AZ Electronic Materials
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- Wu HengPeng
- AZ Electronic Materials
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- Mullen Salem
- AZ Electronic Materials
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- Krawicz Alexandra
- AZ Electronic Materials
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- Lu PingHung
- AZ Electronic Materials
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- Neisser Mark
- AZ Electronic Materials
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Our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARC's) for 193 nm and its use with different implant resist resin types will be discussed. Ion beam implant resistance (As implantation 15 KeV at 5X1015 dose with 20X10-4 amp) and imaging results (1:1 L/S features down to 140 nm) will be shown comparing implant resist materials based upon a fluorinated resins or alicyclic/acrylate resins. Surprisingly, we found that the non-fluorinated materials gave better implant resistance (∼2-3 X1011 atoms/cm2) despite the higher atomic number of fluorine compared to hydrogen in the fluorinated implant materials (∼2-5X1012 atoms/cm2). Finally, an update on the current lithographic performance of the acrylate/alicylic implant resist on second generation DBARC will be discussed.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (3), 359-364, 2007
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詳細情報 詳細情報について
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- CRID
- 1390282679300475520
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- NII論文ID
- 130004464556
- 40015602500
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wnu7c%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8918819
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可