Evaluation of a Negative 193nm DUV Resist for the 45nm Node: Lithography, Degradation Kinetics during Etch and Implant.
-
- May Michael J.
- STMicroelectronics Crolles Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
-
- Derrough Semir
- CEA/LETI
-
- Bazin Arnaud
- STMicroelectronics Crolles
-
- Mortini Bénédicte
- STMicroelectronics Crolles
-
- Brochon Cyril
- Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
-
- Hodziioannou Georges
- Laboratoire d'Ingénierie des Polyméres pour les Hautes Technologies (LIPHT)
この論文をさがす
抄録
A 193 nm negative tone resist has been studied in order to estimate its possible use for the 45 nm node. Therefore, its etch resistance versus a 193 nm positive tone model resist has been analysed and its resolution limit determined by 193 nm interferometric immersion lithography. More recently, due to the chemical composition of the negative tone resist, it has been of interest to use it for thin film implant and some preliminary results will be given.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 20 (3), 345-352, 2007
フォトポリマー学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282679300477440
-
- NII論文ID
- 130004464554
- 40015602498
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DC%2BD2sXot1Wnu7k%3D
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 8918795
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可