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- Thakerlay James W.
- Rohm and Haas Electronic Materials
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- Nassar Roger A.
- Rohm and Haas Electronic Materials
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- Spear-Alfonso Kathleen
- Rohm and Haas Electronic Materials
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- Brainard Robert
- College of Nanoscale Science and Engineering, University at Albany
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- Goldfarb Dario
- IBM Microelectronics Research
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- Wallow Thomas
- Advanced Micro Devices
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- Wei Yayi
- Advanced Lithography Development at Albany, Qimonda North America Corp
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- Montgomery Warren
- College of Nanoscale Science and Engineering, University at Albany
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- Petrillo Karen
- IBM Microelectronics Research
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- Wood Robert
- Advanced Micro Devices
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- Koay Chief-seng
- IBM Microelectronics Research
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- Mackey Jeff
- Micron Technology Inc.
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- Naulleau Patrick
- College of Nanoscale Science and Engineering, University at Albany
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- Pierson Bill
- ASML
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- Solak Harun H.
- Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology
この論文をさがす
抄録
We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection, and acid diffusion length. Our standard high activation resist material, MET-2D (XP5271F), is capable of robust performance at CDs in 40 nm regime and thicknesses above 100 nm. Below 100 nm film thickness, controlling acid diffusion becomes a difficult challenge. We have also developed a low activation resist (XP6305G) which shows superior process window and exposure latitude at CDs in the 35 nm regime. This resist is optimal for 80 nm film thickness. Lastly, we have demonstrated 25 nm 1:1 resolution capability using a novel chemical amplification resist called XP6627. This is the first EUV resist capable of 25 nm resolution. The LER is also very low, 2.7 nm 3σ, for the 25 nm features. Our first version, XP6627G, has a photospeed of 40 mJ/cm2. Our second version, XP6627Q, has a photospeed of 27 mJ/cm2. Our current focus is on improving the photospeed to less than 20 mJ/cm2. The outstanding resolution and LER of this new resist system raises the possibility of extending chemically amplified resist to the 22 nm node.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (3), 411-418, 2007
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詳細情報 詳細情報について
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- CRID
- 1390282679300482304
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- NII論文ID
- 130004464562
- 40015602506
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wmsrs%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8918889
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可