Basic Aspects of Acid Generation Process in Chemically Amplified Electron Beam Resist
-
- Kozawa Takahiro
- The Institute of Scientific and Industrial Research, Osaka University
-
- Tagawa Seiichi
- The Institute of Scientific and Industrial Research, Osaka University
書誌事項
- タイトル別名
-
- Basic Aspects of Acid Generation Processes in Chemically Amplified Electron Beam Resist
この論文をさがす
抄録
Acid generation processes of chemically amplified electron beam (EB) resists are different from those of chemically amplified photoresists. In chemically amplified EB resists, the role of acid generators is to produce not protons but counter anions of acids through the reactions with low energy electrons generated at ionization events. As the distribution of counter anions determines latent acid image, the dynamics of low energy electrons is important in EB lithography. In this work, we made clear the effects of the initial separation distances between radical cations and electrons, the reaction radii of acid generators and the dielectric constants of base polymers on the sensitivity and resolution of chemically amplified resists.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 18 (4), 471-474, 2005
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679301570304
-
- NII論文ID
- 130004464438
- 40006743926
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DC%2BD2MXmtVOqsL0%3D
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 7338409
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可