Thermally Stable Alkylsulfonium Salts for ArF Excimer Laser Resists.

DOI Web Site Web Site 被引用文献2件

この論文をさがす

説明

This paper describes the properties of our new alkylsulfonium salts for use as photoacid generators in ArF excimer laser lithography; 2-oxobutylthiacyclopentanium trifluoromethanesulfonate, 2-oxobutyithiacyclopentanium nonafluorobutanesulfonate, 2-oxobutylthiacyclohexanium trifluoromethanesulfonate, and 2-oxobutylthiacyclohexanium nonafluorobutanesulfonate. These compounds were thermally stable at more than 200°C in air and at more than 170°C in methacrylate-polymer film. They showed low absorption at 193.4nm and high sensitivity with an ArF-excimer-laser dose. The PAGs were also expected to be applicable to resists for use in F2-excimer-laser lithography because of their transparency at 157.6nm, the wavelength of the laser. A resist composed of 2-oxobutylthiacyclopentanium trifluoromethanesulfonate and an alicyclic terpolymer achieved the resolution of a 0.13-μm line-and-space pattern by using an ArF scanner (NA=0.6, annular illumination) at a 20-mJ/cm2 dose.

収録刊行物

被引用文献 (2)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ