Thermally Stable Alkylsulfonium Salts for ArF Excimer Laser Resists.

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This paper describes the properties of our new alkylsulfonium salts for use as photoacid generators in ArF excimer laser lithography; 2-oxobutylthiacyclopentanium trifluoromethanesulfonate, 2-oxobutyithiacyclopentanium nonafluorobutanesulfonate, 2-oxobutylthiacyclohexanium trifluoromethanesulfonate, and 2-oxobutylthiacyclohexanium nonafluorobutanesulfonate. These compounds were thermally stable at more than 200°C in air and at more than 170°C in methacrylate-polymer film. They showed low absorption at 193.4nm and high sensitivity with an ArF-excimer-laser dose. The PAGs were also expected to be applicable to resists for use in F2-excimer-laser lithography because of their transparency at 157.6nm, the wavelength of the laser. A resist composed of 2-oxobutylthiacyclopentanium trifluoromethanesulfonate and an alicyclic terpolymer achieved the resolution of a 0.13-μm line-and-space pattern by using an ArF scanner (NA=0.6, annular illumination) at a 20-mJ/cm2 dose.

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