Numerical Investigations on Requirements for BARC Materials for Hyper NA Immersion Lithography

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  • Matsuzawa Nobuyuki
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Watanabe Yoko
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Thuunakart Boontarika
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Ozawa Ken
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Yamaguchi Yuko
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Ikeda Rikio
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation
  • Kawahira Hiroichi
    Lithography Technology Department, Process Development Division, Semiconductor Technology Development Group, Semiconductor Network Solutions Company, SONY Corporation

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  • Numerical Investigations on Requirements for BARK Materials for Hyper NA Immersion Lithography

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Abstract

Requirement on substrate reflectance was estimated numerically based on an optical simulation for hyper-NA (numerical aperture) lithography with the water immersion technique. Conditions to minimize the substrate reflectance were further calculated for dual BARC (bottom antireflective coating) layers with NA varying from 1.0 to 1.4. In addition, margins of the conditions were estimated based on the requirements on substrate reflectance. Based on these numerical results, requirements for materials to be used for dual BARC layers are discussed.

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