Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography

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Abstract

Nanoimprinting lithography was initiated as an alternative way to achieve nanoscale structures with high throughput and low cost. We have developed a UV-nanoimprint process to fabricate 34(34 crossbar circuits at 50 nm half-pitch (equivalent to a bit density of 10 Gbit/cm2) with single-layer structure. We devised a technique that exploits the opposite free energies of the mold and substrate surfaces to produce a very uniform resist film without any trap air. As the pitch size decreases, lift-off process with single-layer structure was difficult to define metal wires. Sixty-six by sixty-six crossbar structures with a half-pitch of 30 nm (equivalent to a bit density of 30 Gbit/cm2) were produced with bi-layer structure.

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