Contact Hole Resist Solutions for 45-90nm Node Design Rules

DOI Web Site Web Site 被引用文献2件 参考文献19件

この論文をさがす

説明

Target contact hole (C/H) CD sizes for 45-90nm node design rules range from 70 to 130nm with defect levels of one failure per billion contacts. Achieving these C/H design rule targets is a challenging task for the lithographers and the resist chemists. The issue is lack of high resolution and DoF especially for the 65 and 45nm node targets, low depth of focus (DoF) for the isolated contacts even for the 90nm node targets (hence the loss of desired overlap process windows) and high mark error factor (MEF) for the dense contacts. Several resolution enhancement techniques (RETs) such as chromeless phase lithography (CPL), double exposure technique IDEAL and IDEAL-Smile, use of high transmission attPSM have been proposed but none of them have been proven in real production and comes with compromises. The best option and expectation is 193nm resist formulations to deliver the desired targets. While improvements in resolution and process margins are seen and more progress will come as the maturity of the 193nm resists continue, use of resist flow process (RFP) and chemical shrink processes are also being considered at least for the 65nm node and above. Undoubtedly, the resist flow process is the easiest one to implement but it is pitch dependent and therefore does not find global acceptance. Shrink processes such as Resolution Enhancement of Lithography Assisted by Chemical Shrink (RELACSTM in combination of a high performance 193nm resist offers the best promise for the 65-45nm node targets and may be extendable to beyond 45nm node design targets. This paper provides the current status and performance of advanced 193nm single layer resist and the developments in the RELACSTM.

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (19)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ