Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process.

DOI Web Site Web Site 4 Citations

Bibliographic Information

Other Title
  • Chemically Amplified Si contained Resis

Search this article

Description

We have proposed a chemically amplified Si containing resist used silsesquoxane polymer for ArF Lithography (CASUAL). ACASUAL-type polymer of carbon-acid-cyclohexl-silsesgouxane with photo-acid-generators acted as positive-tone resists under ArF exposure; the resist was highly transparent (<50% at 350-nm-thick resist), highly sensitive (<7mJ/cm2) and showed excellent resolution (sub 02μm) for 193-nm exposure. Well-defined sub-02μm BLR patterns were delineated successfully.

Journal

Citations (4)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top