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- Kato Hirokazu
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Seino Yuriko
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Yonemitsu Hiroki
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Sato Hironobu
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Kanno Masahiro
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Kobayashi Katsutoshi
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Kawanishi Ayako
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Imamura Tsubasa
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Omura Mitsuhiro
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Nakamura Naofumi
- Center for Semiconductor Research & Development, Toshiba Corporation
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- Azuma Tsukasa
- Center for Semiconductor Research & Development, Toshiba Corporation
この論文をさがす
抄録
In this study, we conducted electrical via chain yield tests for the purpose of verifying the total process performance of directed self-assembly (DSA) contact hole shrink process. DSA was utilized on the via level connecting between two metal levels. From the analysis of single via resistance data, the best process condition was determined and the via chain yield was obtained. The best yield was 74% at the via chain size of 2.3k and one chip passed the test at the via chain size of 358k. In order to find the root cause of the via chain yield degradation, the failure location was identified by absorbed electron current images and STEM images were taken. It was found that the via did not contact the lower metal level at the failure location. However, we concluded that it was not necessarily caused by DSA process because such failure mode was also observed for the via chains without DSA. Although the via chain size tested at the pre-production stage is much larger by orders of magnitude than the via chain size tested in this study, we believe that significant progress has been made in this study toward semiconductor device manufacturing using DSA contact hole shrink process.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (1), 21-26, 2013
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詳細情報 詳細情報について
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- CRID
- 1390282679302176128
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- NII論文ID
- 130004464984
- 40019685396
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalurnO
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024660107
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可