Effects of Molecular-Weight Distributions of Resist Polymers and Process Control on Lithography for 0.1.MU.m and Below.

DOI Web Site 2 Citations

Search this article

Description

We describe how molecular-weight distributions of resist polymers and process control affect lithography for 0.1μm and below, especially for negative-type resists. There are two main issues for precise critical dimension (CD) control and high resolution in the region: microscopic pattern fluctuation caused by ultrasmall edge roughness in fabricated resist patterns (nano edge roughness); and pattern-size change due to acid diffusion in chemical amplification resists. We have found that nano edge roughness and acid diffusion can be suppressed by controlling the molecular-weight distributions of the base matrix polymers. It is also quite important to control process conditions to achieve high pattern fidelity with molecular-controlled resist materials. Multi-step post baking was applied to minimize the resist pattern deformation before dry etching. We have found that this process can suppress pattern size variations to within 10nm.

Journal

Citations (2)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top