Bismuth Resists for EUV Lithography
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- Passarelli James
- College of Nanoscale Science and Engineering
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- Sortland Miriam
- College of Nanoscale Science and Engineering
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- Re Ryan Del
- College of Nanoscale Science and Engineering
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- Cardineau Brian
- College of Nanoscale Science and Engineering
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- Sarma Chandra
- SEMATECH
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- Freedman Daniel A.
- State University of New York at New Paltz
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- Brainard Robert L.
- College of Nanoscale Science and Engineering
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Abstract
We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post-transition metals. These elements have high EUV optical density so they can utilize a large fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (5), 655-661, 2014
The Society of Photopolymer Science and Technology(SPST)
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Keywords
Details 詳細情報について
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- CRID
- 1390282679302439424
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- NII Article ID
- 130004691098
- 40020133160
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- NII Book ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 025604295
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
