Novel photoacid generators: Key components for the progress of chemically amplified photoresist systems.
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- PAWLOWSKI GEORG
- Hoechst AG, Central Research I
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- DAMMEL RALPH
- Hoechst AG, Central Research I
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- PRZYBILLA KLAUS-JÜRGEN
- Hoechst AG, Central Research I
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- RÖSCHERT HORSY
- Hoechst AG, Central Research I
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- SPIESS WALTER
- Hoechst AG, IC Chemicals Division
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説明
Chemically amplified photoresist systems consist of a photoacid generator (PAG), which interacts with the actinic radiation, and at least one acid sensitive compound, which changes the material's solubility properties under acidic conditions. The PAG is not only the coupler between the applied exposure tools and the photoresist systems, but also determines the nature of the acid produced, which in turn controls the process and performance latitudes of the resist materials. The selection of the optimum PAG is a critical issue in the preparation of production-worthy materials. This paper reviews several new classes of photoacid generating compounds with respect to some of their chemical and physical properties and their lithographic behaviour. The compounds investigated include new 4, 6-bis(trichloromethyl)-1, 3, 5-triazenes, α, α-bis-(sulfonyl)diazomethanes, α-carbonyl-α-sulfonyldiazomethanes, and certain sulfonic esters. Their impact on the lithographic performance of chemically amplified positive and negative tone resists for deep- and near-UV as well as e-beam applications is discussed.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 4 (3), 389-402, 1991
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詳細情報 詳細情報について
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- CRID
- 1390282679302941184
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- NII論文ID
- 130003488625
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- COI
- 1:CAS:528:DyaK3MXmtFyms7c%3D
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- ISSN
- 13496336
- 09149244
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可