Novel photoacid generators: Key components for the progress of chemically amplified photoresist systems.

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説明

Chemically amplified photoresist systems consist of a photoacid generator (PAG), which interacts with the actinic radiation, and at least one acid sensitive compound, which changes the material's solubility properties under acidic conditions. The PAG is not only the coupler between the applied exposure tools and the photoresist systems, but also determines the nature of the acid produced, which in turn controls the process and performance latitudes of the resist materials. The selection of the optimum PAG is a critical issue in the preparation of production-worthy materials. This paper reviews several new classes of photoacid generating compounds with respect to some of their chemical and physical properties and their lithographic behaviour. The compounds investigated include new 4, 6-bis(trichloromethyl)-1, 3, 5-triazenes, α, α-bis-(sulfonyl)diazomethanes, α-carbonyl-α-sulfonyldiazomethanes, and certain sulfonic esters. Their impact on the lithographic performance of chemically amplified positive and negative tone resists for deep- and near-UV as well as e-beam applications is discussed.

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