Preparation and Structure of Rf-Sputtered Amorphous Films in the System ZrO<SUB>2</SUB>-Al<SUB>2</SUB>O<SUB>3</SUB>

  • HANADA Teiichi
    Chemistry, College of Liberal Arts & Sciences, Kyoto University
  • OHKAWA Makoto
    Industrial Chemistry, Faculty of Engineeri ng, Kyoto University
  • SOGA Naohiro
    Industrial Chemistry, Faculty of Engineeri ng, Kyoto University

Bibliographic Information

Other Title
  • 高周波スパッター法によるZrO<SUB>2</SUB>-Al<SUB>2</SUB>O<SUB>3</SUB>系非晶質膜の形成と構造
  • 高周波スパッター法によるZrO2-Al2O3系非晶質膜の形成と構造
  • コウシュウハ スパッタ -ホウ ニ ヨル ZrO2 Al2O3ケイ ヒショウシ
  • Thin films-preparation, structure and properties. Preparation and structure of RF-sputtered amorphous films in the system ZrO2-Al2O3.

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Abstract

Amorphous films in the system ZrO2-Al2O3 were prepared by rf-sputtering and their density, refractive index and thermal expansion were measured. A maximum and a minimum were observed in the density and refractive index at about 15 mol% ZrO2 and 50 mol%ZrO2, respectively. In the thermal expansion coefficient, a minimum was observe d at about 15 mol% ZrO2. The coordination states of cations in these amorphous films were determined by the chemical shift of aluminum Ka X-ray emission spectra for aluminum ions and by the change of molar refractivity of zirconium dioxide for zirconium ions. The mean coordination number of aluminum ions changed from five to a slightly lower value. On the other hand, the coordination number of zirconium ions in the amorphous films below 15 mol% ZrO2 content was below six, but it became almost six, independent of ZrO2 content, in the region of more than 20 mol% ZrO2.

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1987 (11), 1861-1866, 1987-11-10

    The Chemical Society of Japan

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