シランガスの連続発振CO<SUB>2</SUB>レーザーによる励起とCARS診断CO<SUB>2</SUB>レーザーCVDプロセス

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タイトル別名
  • Laser-induced Deposition of Silicon Films and CARS Diagnostics CO<SUB>2</SUB> Laser Assisted CVD Processes
  • シランガスの連続発振CO2レーザーによる励起とCARS診断--CO2レーザーCVDプロセス
  • シランガス ノ レンゾク ハッシン CO2レーザー ニ ヨル レイキ ト CA
  • Laser-induced Deposition of Silicon Films and CARS Diagnostics CO2 Laser Assisted CVD Processes

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The present paper is concerned with cw CO2 laser assisted Chemical Vapor Deposition (CVD)of silane molecules (SiH4). The observed dependence of deposition rates on laser wavelengths indicates that gas phase reactions are involved in deposition processes. We applied a powerful new diagnostic means, Coherent Anti-Stokes Raman Spectroscopy (CARS), in order to detect species involved in the reactions. Temperature was deduced from CARS spectra of N2 mixed with SiH4 gas. The CO2 laser beams were found to raise the temperature of the gas containin SiH4 when they were tuned to absorption lines of SiH4. CARS spectra of the heated Sill, gas were characterized by a complicated profile with a broad shoulder and double peaks. We interpreted the shape of the spectra as arising from reaction products, probably Si2H6 and hot bands of SiH4. Applying this interpretation to observed results, we can judge how Siff, molecules are disturbed differently according to laser wavelength and a distance from a substrate. Near the substrate the spectra are characterized by the presence of the broad extra peak of hot SiH4 and Si2H6 in addition to the main peak of SiH4. As the distance from the substrate increase, the extra peak gets close to the main peak and the widths decrease. This suggests that the effect of substrate on heating the molecules in the gas phase is very efficient when the cw CO2 laser beam is normal to the substrate.

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