Rotating vibration type silicon angular rate sensor by deep ICPRIE and XeF<sub>2</sub> gas etching

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  • Deep ICPRlEとXeF<sub>2</sub>ガスエッチングによる回転振動型角速度センサ
  • Deep ICPRIE ト XeF2 ガスエッチングニヨルカイテン シンドウガ

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Abstract

A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250deg./sec. and measured sensitivity was 2.1fF/(deg./sec.).

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