Rotating vibration type silicon angular rate sensor by deep ICPRIE and XeF<sub>2</sub> gas etching
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- Choi Jae-joon
- Tohoku University
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- Minami Kazuyuki
- Tohoku University
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- Esashi Masayoshi
- Tohoku University
Bibliographic Information
- Other Title
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- Deep ICPRlEとXeF<sub>2</sub>ガスエッチングによる回転振動型角速度センサ
- Deep ICPRIE ト XeF2 ガスエッチングニヨルカイテン シンドウガ
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Abstract
A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250deg./sec. and measured sensitivity was 2.1fF/(deg./sec.).
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 118 (10), 437-443, 1998
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679438271744
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- NII Article ID
- 10005323789
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
- http://id.crossref.org/issn/03854213
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- NDL BIB ID
- 4565945
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed