Low Temperature Al-Al Thermo-compression Bonding with Sn Oxidation Protect Layer for Wafer-level Hermetic Sealing
-
- Shiro Satoh
- Micro System Integration Center, Tohoku University
-
- Hideyuki Fukushi
- Micro System Integration Center, Tohoku University
-
- Masayoshi Esashi
- Micro System Integration Center, Tohoku University
-
- Shuji Tanaka
- Micro System Integration Center, Tohoku University Graduate School of Engineering, Tohoku University
Bibliographic Information
- Other Title
-
- 酸化防止層にSnを用いた低温Al-Al熱圧着ウェハレベル真空封止接合の研究
- サンカ ボウシソウ ニ Sn オ モチイタ テイオン Al-Al ネツ アッチャク ウェハレベル シンクウ フウシ セツゴウ ノ ケンキュウ
Search this article
Abstract
This paper describes hermetic seal wafer bonding using Al covered with thin Sn as an antioxidation layer. The bonding temperature is below 400℃, which is the maximum temperature of CMOS-LSI backend process. Gas tightness over 3000 h at room temperature and sealing stability through heat treatment under a typical reflow condition of 260℃ for 10 min were confirmed for samples bonded at 370℃ and 380℃. A key for successful hermetic seal bonding is relatively high bonding pressure and stress concentration on sealing frames as narrow as several ten microns. The results of SEM and EDX analysis suggested that the bonding was due to direct Al-Al bonding, while Sn was diffused sparsely among Al grain boundaries. The developed bonding technology is usable for wafer-level integration of LSI and MEMS in conjunction with hermetic sealing.
Journal
-
- IEEJ Transactions on Sensors and Micromachines
-
IEEJ Transactions on Sensors and Micromachines 136 (6), 237-243, 2016
The Institute of Electrical Engineers of Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390282679439227648
-
- NII Article ID
- 130005154786
-
- NII Book ID
- AN1052634X
-
- ISSN
- 13475525
- 13418939
-
- NDL BIB ID
- 027489018
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed