Effect of Incidence Angle of Ions Caused by Inaccuracy of Stage Tilt Angle and Stage Rotation Angle on Sputter Depth Profiling Analysis

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  • スパッタ深さ方向分析におけるサンプルステージの傾斜角と回転角の誤差がイオン入射角に与える影響
  • スパッタ フカサ ホウコウ ブンセキ ニ オケル サンプルステージ ノ ケイシャカク ト カイテンカク ノ ゴサ ガ イオン ニュウシャカク ニ アタエル エイキョウ

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Auger electron spectroscopy (AES) is frequently applied for sputter depth profiling of ultra thin films. The angle of incidence of sputter ion is selected depending on the purpose of the depth profiling. The depth resolution is improved by applying glancing angle of ion beam. An inclined holder and adequate rotation angle of stage is proposed in order to implement the glancing angle of ion beam. However, the experiment requites delicate conditions. In this study, effect of angle of incidence of ions caused by inaccuracy of stage tilt angle and stage rotation angle was investigated using computer calculation. The numerical results for some commercial AES equipment are also reported.

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